The 1st NEXUS internship finished. Congratulations to our intern students!
The NEXUS International Internship Program hosted three students from Hanoi University of Science and Technology from 1 March to 30 […]
News & Highlight
Graduation!
Congratulations to our graduate! 🎓 This March we celebrate the graduation of six undergrates and three Master students. Wishing
“Laser-Written” Superconductors on Topological Tin: A New Route to Directional, Low-Loss Quantum Circuits
Superconductors can carry electrical current with zero resistance, offering an ultra-efficient platform for next-generation electronics and quantum technologies. Meanwhile, “topological”
1st NEXUS Internship Program for HUST Students starts!
So happy to welcome three HUST-ers to the NEXUS Internship Program for Semiconductor at The University of Tokyo (UTokyo)! Wishing you
Anh Kiban-S Project Research Meeting Held
On Thursday, February 19, 2026, we hosted the Anh Kiban-S Project Research Meeting, bringing together participants on site (Room 340B,
The 1st Vietnam–Japan Semiconductor Symposium (VJSS2025) was successfully held in Osaka
The 1st Vietnam–Japan Semiconductor Symposium (VJSS2025) was successfully held on October 17, with the participation of 5 NEXUS Japan teams
The research proposal led by Associate Professor Anh has been selected for the JST NEXUS Vietnam “Semiconductor”
This research is a collaborative project between the University of Tokyo and Hanoi University of Science and Technology, aiming to
A New Material Platform for Topological Quantum Circuits Realized
Our laboratory has developed a novel fabrication technique to create superconducting β-Sn nanostructures within topological Dirac semimetal (TDS) α-Sn thin
Achieved a World’s Highest Quality Single-Element Topological Dirac Semimetal
我々が世界最高品質のa-スズ (a-Sn) 薄膜をIII-V族 半導体InSb基板 (001) 上に結晶成長させることに成功 し、a-Sn薄膜の様々なトポロジカル物性を初めて明ら かにしました。
Discovery of a New Electronic Conduction Phenomenon in Non-magnetic/Ferromagnetic Semiconductor Heterojunctions
非磁性半導体InAs/強磁性半導体(Ga, Fe) Sb二層ヘテ ロ接合において、巨大磁気近接効果および新しい近接 磁気抵抗効果を発見しました。さらに、ゲート電圧を 印加して磁気近接効果を制御することで非磁性層の電 子状態に大きなスピン分裂を発現できた。 強磁性半導体を用いた次世代スピントロニクス・デ バイスや量子情報処理にも使える可能性を示しました。 本論文がNature Physics誌に出版されました。