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Latest news and activities from our labolatory

On October 2, 2026, H.E. Prof. Vu Hai Quan, Minister of Science and Technology of Vietnam, visited the University of

The 2nd Vietnam–Japan Semiconductor Symposium 2026 (VJSS2026) was successfully held in Hanoi, Vietnam, from September 20 to 23, 2026. Associate

The NEXUS International Internship Program hosted three students from Hanoi University of Science and Technology from 1 March to 30

Congratulations to our graduate! 🎓 This March we celebrate the graduation of six undergrates and three Master students. Wishing

Superconductors can carry electrical current with zero resistance, offering an ultra-efficient platform for next-generation electronics and quantum technologies. Meanwhile, “topological”

So happy to welcome three HUST-ers to the NEXUS Internship Program for Semiconductor at The University of Tokyo (UTokyo)! Wishing

On Thursday, February 19, 2026, we hosted the Anh Kiban-S Project Research Meeting, bringing together participants on site (Room 340B,

The 1st Vietnam–Japan Semiconductor Symposium (VJSS2025) was successfully held on October 17, with the participation of 5 NEXUS Japan teams

This research is a collaborative project between the University of Tokyo and Hanoi University of Science and Technology, aiming to

Our laboratory has developed a novel fabrication technique to create superconducting β-Sn nanostructures within topological Dirac semimetal (TDS) α-Sn thin

我々が世界最高品質のa-スズ (a-Sn) 薄膜をIII-V族 半導体InSb基板 (001) 上に結晶成長させることに成功 し、a-Sn薄膜の様々なトポロジカル物性を初めて明ら かにしました。
非磁性半導体InAs/強磁性半導体(Ga, Fe) Sb二層ヘテ ロ接合において、巨大磁気近接効果および新しい近接 磁気抵抗効果を発見しました。さらに、ゲート電圧を 印加して磁気近接効果を制御することで非磁性層の電 子状態に大きなスピン分裂を発現できた。 強磁性半導体を用いた次世代スピントロニクス・デ バイスや量子情報処理にも使える可能性を示しました。 本論文がNature Physics誌に出版されました。
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