We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Latest writings
The latest news, technologies, and resources from our team.
February 20, 2026
Anh Kiban-S Project Research Meeting Held
September 28, 2025
The research proposal led by Associate Professor Anh has been selected for the JST NEXUS Vietnam “Semiconductor”
September 29, 2024
A New Material Platform for Topological Quantum Circuits Realized
July 26, 2024
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility
July 26, 2024
Exploring new topological materials
We exploring the growth and novel physics of new topological
July 26, 2024
Superconductor/Ferromagnetic Semiconductor Hybrid Structures
We aim to integrate "Superconductivity" and "Ferromagnetism" onto a single
