We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Latest writings
The latest news, technologies, and resources from our team.
September 29, 2024
A New Material Platform for Topological Quantum Circuits Realized
July 26, 2024
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility
July 26, 2024
Exploring new topological materials
We exploring the growth and novel physics of new topological
July 26, 2024
Superconductor/Ferromagnetic Semiconductor Hybrid Structures
We aim to integrate "Superconductivity" and "Ferromagnetism" onto a single
July 26, 2024
Semiconductor-based Spintronics
We aim to utilize the spin degrees of freedom in
July 26, 2024
Achieved a World’s Highest Quality Single-Element Topological Dirac Semimetal
我々が世界最高品質のa-スズ (a-Sn) 薄膜をIII-V族 半導体InSb基板 (001) 上に結晶成長させることに成功 し、a-Sn薄膜の様々なトポロジカル物性を初めて明ら かにしました。
