We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Latest writings
The latest news, technologies, and resources from our team.
March 25, 2026
Graduation!
March 4, 2026
“Laser-Written” Superconductors on Topological Tin: A New Route to Directional, Low-Loss Quantum Circuits
March 1, 2026
1st NEXUS Internship Program for HUST Students starts!
February 20, 2026
Anh Kiban-S Project Research Meeting Held
October 17, 2025
The 1st Vietnam–Japan Semiconductor Symposium (VJSS2025) was successfully held in Osaka
