We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Latest writings
The latest news, technologies, and resources from our team.
October 3, 2026
Vietnam’s Minister of Science and Technology Visits the University of Tokyo and Meets the NEXUS Team
September 27, 2026
September 20-23: VJSS2026 Successfully Concluded in Hanoi
June 7, 2026
The 1st NEXUS internship finished. Congratulations to our intern students!
March 25, 2026
Graduation!
March 4, 2026
“Laser-Written” Superconductors on Topological Tin: A New Route to Directional, Low-Loss Quantum Circuits
