We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
We exploring the growth and novel physics of new topological materials, including topological Dirac and Weyl semimetals, topological insulators, and their heterostructures.
We aim to integrate “Superconductivity” and “Ferromagnetism” onto a single semiconductor platform, by developing heterostructures of s-wave superconductors (SC) and Fe-doped ferromagnetic semiconductors (FMS).
We aim to utilize the spin degrees of freedom in artificially synthesized materials, with the main spotlight shed on ferromagnetic semiconductors (FMSs).
