This research is a collaborative project between the University of Tokyo and Hanoi University of Science and Technology, aiming to realize next-generation high-performance and highly reliable devices. Specifically, we are developing advanced materials such as gallium nitride (GaN), β-gallium oxide (β-Ga₂O₃), and strontium titanate (SrTiO₃), and applying them to a wide range of high-performance electronic devices, including high-voltage diodes, high-electron-mobility transistors (HEMTs), spintronics, and flexible devices. Through close collaboration between the two teams, this project also seeks to promote material innovation in next-generation electronics and contribute to the training of young researchers.
As part of this research project, we are recruiting highly motivated Vietnamese students to join the PhD program at UTokyo in the following cutting-edge research areas:
- Advanced MOSFET, Cryogenic CMOS, 3D Integration
- Spintronic Materials & Devices, Memory Devices, Neuromorphic Devices
- 2D Materials and Devices
- Bio-Electronics (e.g., gas sensors)
- Power Semiconductors
- Thermal Management & Chip Cooling
- Energy-Harvesting Devices
- Flexible (Organic) Electronics
- Silicon Photonics & Opto-Electronics
- VLSI Design
📩 If you are interested, please contact us at: vietnam.utokyo@gmail.com
