We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Latest writings
The latest news, technologies, and resources from our team.
June 7, 2026
The 1st NEXUS internship finished. Congratulations to our intern students!
March 25, 2026
Graduation!
March 4, 2026
“Laser-Written” Superconductors on Topological Tin: A New Route to Directional, Low-Loss Quantum Circuits
March 1, 2026
1st NEXUS Internship Program for HUST Students starts!
February 20, 2026
Anh Kiban-S Project Research Meeting Held
