We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility transport channels at their interfaces, in which the control of oxygen atoms plays a vital role. These interfacial channels are promising for high efficient spin-to-charge conversion, high-speed transistors, and flexible electronic devices.
Latest writings
The latest news, technologies, and resources from our team.
September 28, 2025
The research proposal led by Associate Professor Anh has been selected for the JST NEXUS Vietnam “Semiconductor”
September 29, 2024
A New Material Platform for Topological Quantum Circuits Realized
July 26, 2024
Oxide-based Electronics
We develop oxide-based devices utilizing functional oxide materials and high-mobility
July 26, 2024
Exploring new topological materials
We exploring the growth and novel physics of new topological
July 26, 2024
Superconductor/Ferromagnetic Semiconductor Hybrid Structures
We aim to integrate "Superconductivity" and "Ferromagnetism" onto a single
July 26, 2024
Semiconductor-based Spintronics
We aim to utilize the spin degrees of freedom in
